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4*8cm Triple junction Gallium arsenide solar cell sale
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4*8cm Triple junction Gallium arsenide solar cell

4*8cm triple junction gaas cell is used for nanosatellite and cubesat application. you can also use it into tracking system etc. it has high efficiency and triple junction and crisp feature to make it flexbile.

 Technical data for 4*8cm Triple junction Gallium arsenide solar cell

 

1Solar Cell Schematic Structure       
n-on-p structure, Ge substrate      
 GaInP/InGaAs/Ge Triple Junction Solar Cell      
Al2O3/TiOX DARC      
Method of GaAs growth: MOCVD      
2Features       
Bare cell      
Area: 30.15mm2      
Size: 80.0mm×40.0mm      
Thickness: 155±20 um      
CIC       
Size: Drawing 1      
Weight:3.8g±0.2gwith cover glass and bypass diode       
3Typical Electrical Parameters       
(AM0, 135.3mW/cm2, 25)      
Jsc=17.2mA/cm2      
Voc=2.70V      
Vm=2.36      
Jm=16.4      
 Eff= 30%      
4. Thermal Properties       
Solar Absorptance ≤ 0.92      
Emittance (Normal)= 0.84±0.02      
5. Radiation Degradation ( Fluence 1MeV )      
Parameters 1×1014e/cm2 5×1014e/cm2 1×1015e/cm2
Imp/Imp0 0.99 0.96 0.94
Vmp/Vmp0 0.94 0.92 0.91
Pmp/Pmp0 0.93 0.88 0.85
6. Temperature Coefficients (15℃~75      
Parameters BOL 1 MeV, 5×1014e/cm2  
Jsc (uA/cm2/) 5 6  
Voc (mV/) -6.2 -6.6  

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